Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact
نویسندگان
چکیده
In photonics and optics, the refractive index of a material, first introduced by Isaac Newton as the optical density, is the most fundamental material constant. Since the refractive index determines refraction and reflection occurring at the boundary between two media, it is a critical parameter for the design of optical components, such as distributed Bragg reflectors (DBRs), omnidirectional reflectors, antireflection (AR) coatings, and optical resonators. In many cases, however, the unavailability of materials with desired refractive indices, particularly materials with very low refractive indices, prevents the implementation of optical components with very high performance. In addition, the choice of a material with desired refractive index often forces a compromise in other materials properties such as optical transmittance and electrical conductivity that are also important for most optoelectronic applications. Here, we show that oblique-angle deposition can be used to tailor the refractive index of a thinfilm material that is chosen for its desired material properties other than refractive index. The unique ability to control the refractive index of thin film materials allows one to eliminate Fresnel reflection, one of the fundamental limitations in lightextraction efficiency of light-emitting diodes (LEDs), by fabricating coatings whose refractive index gradually decreases from the refractive index of the active semiconductor layer to the refractive index of the surrounding medium. As an example of this concept, we present a six-layer graded-refractiveindex (GRIN) AR coating made entirely of a single material, indium tin oxide (ITO), chosen for its high conductivity, high optical transmittance, and low contact resistance with GaN. Each layer has a refractive index that is individually tuned to form a stack with refractive index graded from its dense ITO value down to the value close to that of air for an optimum AR performance. It is shown that GaInN LEDs with a GRIN ITO AR contact achieve a light-extraction efficiency enhancement of 24.3 % compared to the LEDs with dense ITO coating due to a strongly reduced Fresnel reflection at the ITO– air interface. Oblique-angle deposition is a method of growing porous thin films, and hence thin films with low-refractive index (lown), enabled by surface diffusion and self-shadowing effects during the deposition process. In oblique-angle deposition, a random growth fluctuation on the substrate produces a shadow region that the incident vapor flux cannot reach, and a non-shadow region where incident flux deposits preferentially, thereby creating an oriented rodlike structure with high porosity. Figure 1 shows the cross-sectional scanning-electron microscopy (SEM) image of low-n ITO, which is electrically conductive and optically transparent in visible wavelengths, C O M M U N IC A IO N
منابع مشابه
III–Nitride-Based Microarray Light-Emitting Diodes with Enhanced Light Extraction Efficiency
In this paper, the enhancement of light extraction efficiency in III–nitride-based light-emitting diodes (LEDs) with an array of microstructures is demonstrated numerically and experimentally at the near-ultraviolet (n-UV) spectral region. Two different microstructures are adopted to study the mechanism, including the shallow etching of microstructures on the indium–tin-oxide (ITO) p-contact an...
متن کاملEnhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.
A remarkable enhancement of light extraction efficiency in GaN-based blue light-emitting diodes (LEDs) with rough beveled ZnO nanocone arrays grown on the planar indium tin oxide (ITO) layer is reported. The light output power of LEDs with rough beveled ZnO nanocone arrays was increased by about 110% at 20 mA compared with conventional LEDs with planar ITO. The light extraction efficiency of Ga...
متن کاملOblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes.
This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to...
متن کاملVertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots
The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlG...
متن کاملGaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forw...
متن کامل